THERMAL SIZE EFFECTS IN CONTACT  METAL SEMICONDUCTOR

Gulomov Gafurjon; Kudiratulla Bekbaevich; Umarov Kudiratulla Bekbaevich

doi:10.31149/ijot.v2i12.1060

Gulomov Gafurjon Professor of the Department of Physics, Namangan Institute of Civil Engineering,
Kudiratulla Bekbaevich Doctor of Physical and Mathematical Sciences.
Umarov Kudiratulla Bekbaevich Head of the Department of "Energy" Namangan Institute of Civil Engineering, Candidate of Physical and Mathematical Sciences, Associate Professor

DOI: https://doi.org/10.31149/ijot.v2i12.1060

Keywords: thermal, dimensional, effects, Schottky, barrier, cooling length, heat transfer

Abstract

The heating of electrons and phonons, as well as thermal size effects in the Schottky barrier, are investigated. The dependence of the electron and phonon temperature is analyzed depending on the thermal boundary conditions and the sample size. It was found that in thin (ka << 1) diodes at the contacts, the electron temperature is much higher than the phonon temperature. When the condition of ideal heat transfer is satisfied in an ohmic contact, the temperatures of electrons and phonons coincide with the ambient temperature. In massive (ka >> 1) diodes in the volume, the temperatures of electrons and phonons coincide, and in an ohmic contact, the temperatures coincide with the ambient temperature.

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