Isakov, B. O., Rakhmonov, B. R., & Subkhonberdiev, S. N. (2022). Influence of Impurity Atoms of Gallium and Antimony on the Concentration of Optically Active Oxygen in the Silicon Lattice. International Journal on Orange Technologies, 4(6), 57–60. https://doi.org/10.31149/ijot.v4i6.3146