ISAKOV, B. O.; RAKHMONOV, B. R.; SUBKHONBERDIEV, S. N. Influence of Impurity Atoms of Gallium and Antimony on the Concentration of Optically Active Oxygen in the Silicon Lattice. International Journal on Orange Technologies, [S. l.], v. 4, n. 6, p. 57–60, 2022. DOI: 10.31149/ijot.v4i6.3146. Disponível em: https://journals.researchparks.org/index.php/IJOT/article/view/3146. Acesso em: 23 oct. 2026.