Isakov, B. O., B. R. Rakhmonov, and Sh. N. Subkhonberdiev. “Influence of Impurity Atoms of Gallium and Antimony on the Concentration of Optically Active Oxygen in the Silicon Lattice”. International Journal on Orange Technologies 4, no. 6 (June 7, 2022): 57-60. Accessed April 26, 2024. https://journals.researchparks.org/index.php/IJOT/article/view/3146.