Chalcogenideth in Films with Micro Transitions

Naymanboyev Raxmonali; Yuldashev Abror Abduvositovich; Yuldashev Shohjahon Abrorovich; Yuldasheva Shahrizoda Abrorjon qizi

doi:10.31149/ijhcs.v3i2.1651

Naymanboyev Raxmonali Docent, TATU Fergana branch, Uzbekistan
Yuldashev Abror Abduvositovich Teacher, Fergana State University, Uzbekistan
Yuldashev Shohjahon Abrorovich Doctoral student, Fergana State University, Uzbekistan
Yuldasheva Shahrizoda Abrorjon qizi Bachelor, Fergana State University, Uzbekistan

DOI: https://doi.org/10.31149/ijhcs.v3i2.1651

Keywords: Thin film, chalcogenides, current-voltage dependence, shunting

Abstract

This paper presents the results of studies of thin films of chalcogenides with in homogeneities of the microp-n-transition type. The current-voltage dependence (I (V)) is obtained and the analysis is carried out in some special cases. Super linear and super linear regions of the I (V) dependence are found. It is shown that the super linear region of the dependence means that the recombination losses of the injection current in the pandn-regions make up a small fraction of the saturation current of a single transition. The linear region of the I (V) dependence at the origin of coordinates depends on the degree of shunting of microjunctions.

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