Study of the effect of bismuth electrophysical properties of gallium phosphide single crystals
Keywords:
Semiconductors, crystallization, technological change, crystal, appearence
Abstract
Semeconductor compounds with is ovalent impurities, effect of bismuth electrophysical properties, processing into a growing crystal, electrical properties of Ga P, mobility of crystals , the interaction of bismuth with silicon
References
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2. Гермоченов В.П., Отман Я.И., Чалдышев В.В. Подавление "природных" акцепторов в GaSb путем изовалентного легирования висмутом. ФТП. 1990. т.24. в.6.с.1095-1101.
3. Уфимцев В.Б., Евгеньев С.Б., Исламов С.А. и др. Способ получения монокристаллов фосфида галлия. Автор.свид.№1322720 от 8 марта 1987 г. МИТХТ им.М.В.Ломоносова.
4. Имамов Э.З., Алибеков С.А. “Факторы, вляющие на равновесное дефектообразование в изовалентно-легированных полупроводниках А3В5”. Материалы республиканской научной конференции, Т.: 2017 г. С.36-37.
5. https://books.google.co.uz>books
6. Bagbekova L.K. Opportunities of massive open online courses European Journal of Research and Reflection in Educational Sciences Vol. 7 No. 12, 2019 ISSN 2056-5852/768-771p.
7. Suleymanova R.,Sharipov N. The Process of Creation of Electronic Educational Resources under Conditions of Reforming Continuous Education // International Journal of Advanced Research in Science, Engineering and Technology India. Volume 6, Issue 10. October 2019.
Published
2020-09-30
How to Cite
[1]
Alibekov Sayfulla Abduganievich 2020. Study of the effect of bismuth electrophysical properties of gallium phosphide single crystals. International Journal on Integrated Education. 3, 9 (Sep. 2020), 257-259. DOI:https://doi.org/10.17605/ijie.v3i9.642.
Section
Articles
Copyright (c) 2020 Alibekov Sayfulla Abduganievich
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